The Applied Centura Enabler Etch is a state-of-the-art etch system whose unique design results in versatile, highly controllable, multi-application process capability that accommodates all-in-one processing of BEOL dual damascene low-k integration schemes for high-volume production as well as advanced high aspect ratio (HAR) contact structures for FEOL.  Specifically refined for HAR applications at current and future memory technology nodes, the Enabler E5 etches contact aspect ratios exceeding 40:1, with >80% bottom-to-top critical dimension ratios, CD bias non-uniformity of <3nm, and no profile bending.

Enabler’s exceptional all-in-one process integration capability derives from a patented high-frequency source for plasma density generation that is fully decoupled from ion energy and ion energy distribution. The distinctive source enables the chamber to operate in either a low dissociation, high selectivity mode needed for preserving the integrity of ultra-thin photoresists (PR) or a high dissociation mode required for effectively and efficiently removing PR and post-etch residues, and for chamber cleaning. Ion flux and neutral species distribution are independently tunable to provide ultra-precise on-wafer performance.

Enabler performs all the steps in a complex integration scheme (e.g., mask open, via, trench, resist strip and residue removal, barrier open) in a single chamber. The resulting stable and repeatable etch performance is due to superior plasma stability over a large pressure/flow operating window. The system operates with plasma on from step to step, achieving substantial savings in costs and cycle time by eliminating plasma re-ignition steps.

Enabler E5 resolves today’s leading HAR etch challenges, expanding the etch stop window, and optimizing bottom-to-top CD ratio and profile control with consistently repeatable results.  Independent inner and outer wafer temperature tunability, higher-power dual frequency bias, and a modified gas delivery scheme achieve enhanced etch depth capability, superior etch rate and CD bias uniformity as well as large bottom-to-top CD ratio with no profile bending.

Efficient clean capability and high-purity plasma resistant chamber materials combine to produce ultra-stable Clean Mode chamber conditions and world-class particle performance. These, in turn, ensure lot-to-lot repeatability in a volume production environment and result in a low cost of consumables (CoC).

Their unique design and process flexibility, productivity, and low CoC make Enabler and Enabler E5 ideal for the most demanding next-generation etch applications.